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| MMBFJ309LT1G, MMBFJ310LT1G JFET - VHF/UHF Amplifier Transistor N-Channel Features http://onsemi.com 2 SOURCE * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Gate Current Symbol VDS VGS IG Value 25 25 10 Unit Vdc Vdc mAdc 1 Symbol PD Max 225 1.8 556 -55 to +150 Unit mW mW/C C/W C 2 3 3 GATE 1 DRAIN THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature SOT-23 (TO-236) CASE 318 STYLE 10 MARKING DIAGRAM RqJA TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 6x M G G 1 = Device Code x = U for MMBFJ309LT1 x = T for MMBFJ310LT1 M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. 6x ORDERING INFORMATION Device MMBFJ309LT1G MMBFJ310LT1G Package Shipping SOT-23 3,000 / Tape & Reel (Pb-Free) SOT-23 3,000 / Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2009 August, 2009 - Rev. 4 1 Publication Order Number: MMBFJ309LT1/D MMBFJ309LT1G, MMBFJ310LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = -1.0 mAdc, VDS = 0) Gate Reverse Current (VGS = -15 Vdc) Gate Reverse Current (VGS = -15 Vdc, TA = 125C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VDS = 10 Vdc, VGS = 0) Gate-Source Forward Voltage (IG = 1.0 mAdc, VDS = 0) SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Input Capacitance (VGS = -10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Reverse Transfer Capacitance (VGS = -10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Equivalent Short-Circuit Input Noise Voltage (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) |Yfs| |yos| Ciss Crss en 8.0 - - - - - - - - 10 18 250 5.0 2.5 - nV mmhos mmhos pF pF Hz MMBFJ309 MMBFJ310 IDSS VGS(f) 12 24 - - - - 30 60 1.0 mAdc Vdc MMBFJ309 MMBFJ310 V(BR)GSS IGSS VGS(off) -25 - - -1.0 -2.0 - - - - - - -1.0 -1.0 -4.0 -6.5 Vdc nAdc mAdc Vdc Symbol Min Typ Max Unit http://onsemi.com 2 MMBFJ309LT1G, MMBFJ310LT1G 70 60 I D , DRAIN CURRENT (mA) VDS = 10 V 50 40 30 20 10 -5.0 IDSS + 25C + 25C 40 +150C + 25C - 55C +150C -1.0 -4.0 -3.0 -2.0 ID - VGS, GATE-SOURCE VOLTAGE (VOLTS) IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS) 0 30 20 10 0 TA = - 55C 50 70 60 IDSS, SATURATION DRAIN CURRENT (mA) Figure 1. Drain Current and Transfer Characteristics versus Gate-Source Voltage Yfs , FORWARD TRANSCONDUCTANCE (mhos) 100 k Yfs 1.0 k Yos, OUTPUT ADMITTANCE ( mhos) CAPACITANCE (pF) 10 RDS 7.0 120 R DS , ON RESISTANCE (OHMS) Yfs 10 k 96 100 72 Cgs 4.0 48 1.0 k Yos VGS(off) = - 2.3 V = VGS(off) = - 5.7 V = 10 Cgd 1.0 0 10 24 100 0.01 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 ID, DRAIN CURRENT (mA) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 VGS, GATE SOURCE VOLTAGE (VOLTS) Figure 2. Common-Source Output Admittance and Forward Transconductance versus Drain Current Figure 3. On Resistance and Junction Capacitance versus Gate-Source Voltage http://onsemi.com 3 MMBFJ309LT1G, MMBFJ310LT1G |S21|, |S11| 30 VDS = 10 V ID = 10 mA TA = 25C 3.0 0.85 0.45 S22 2.4 Y12 (mmhos) Y11 0.79 0.39 S21 1.8 0.73 0.33 VDS = 10 V ID = 10 mA TA = 25C S11 0.6 Y12 0 100 200 300 500 f, FREQUENCY (MHz) 700 1000 0.55 0.15 100 0.61 0.21 S12 200 300 500 f, FREQUENCY (MHz) 700 1000 0.90 0.012 0.92 0.036 0.96 0.048 0.98 |S12|, |S22| 0.060 1.00 |Y11|, |Y21 |, |Y22 | (mmhos) 24 18 12 Y21 Y22 1.2 0.67 0.27 0.024 0.94 6.0 Figure 4. Common-Gate Y Parameter Magnitude versus Frequency q21, q11 180 50 q22 170 40 q21 q12, q22 - 20 87 - 20 - 40 - 60 - 80 - 100 150 20 q12 q11 140 10 VDS = 10 V ID = 10 mA TA = 25C 700 - 120 84 - 140 - 160 83 - 180 - 200 82 1000 - 120 - 100 - 80 85 - 60 86 Figure 5. Common-Gate S Parameter Magnitude versus Frequency q11, q12 - 20 120 q21 q21, q22 q11 q22 0 - 40 100 - 20 160 30 80 - 40 60 q12 40 VDS = 10 V ID = 10 mA TA = 25C 200 300 500 f, FREQUENCY (MHz) q21 q11 - 60 - 80 130 0 100 200 300 500 f, FREQUENCY (MHz) 20 100 700 - 100 1000 Figure 6. Common-Gate Y Parameter Phase-Angle versus Frequency Figure 7. S Parameter Phase-Angle versus Frequency http://onsemi.com 4 MMBFJ309LT1G, MMBFJ310LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 MMBFJ309LT1/D |
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